HGT1S15N120C3
35A, 1200V, N-CHANNEL IGBT
Transistors Igbts Single
TO-262-3 Long Leads, I²Pak, TO-262AA
Active
Price available on request
MOQ: 81 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | HGT1S15N120C3 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 164 W |
| Supplier Device Package | I2PAK (TO-262) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
HGT1S15N120C3 by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-262-3 Long Leads, I²Pak, TO-262AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for HGT1S15N120C3
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All Technical Specifications
| Input Type | Standard |
| Gate Charge | 100 nC |
| Power - Max | 164 W |
| Vce(on) (Max) @ Vge, Ic | 3.5V @ 15V, 15A |
| Current - Collector (Ic) (Max) | 35 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
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