HFA3127RZ
RF TRANS 5 NPN 12V 8GHZ 16QFN
Transistors Bipolar Bjt Rf
16-VFQFN Exposed Pad
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Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Renesas Electronics America Inc |
| Model | HFA3127RZ |
| Package / Case | 16-VFQFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Power Dissipation (Max) | 150mW |
| Supplier Device Package | 16-QFN (3x3) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
HFA3127RZ by Renesas Electronics America Inc is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 16-VFQFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for HFA3127RZ
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All Technical Specifications
| Power - Max | 150mW |
| Transistor Type | 5 NPN |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 3.5dB @ 1GHz |
| Current - Collector (Ic) (Max) | 65mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 2V |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
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