HAT2210RWS-E
MOSFET N-PAK 8SOP
Transistors Fets Mosfets Arrays
8-SOIC (0.154", 3.90mm Width)
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Renesas Electronics America Inc |
| Model | HAT2210RWS-E |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| FET Type | 2 N-Channel (Dual), Schottky |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 24mOhm @ 3.75A, 10V, 22mOhm @ 4A, 10V |
| Vgs(th) (Max) | 2.5V @ 1mA |
| Gate Charge (Qg) | 4.6nC @ 4.5V, 11nC @ 4.5V |
| Input Capacitance (Ciss) | 630pF @ 10V, 1330pF @ 10V |
| Power Dissipation (Max) | 1.5W (Ta) |
| Supplier Device Package | 8-SOP |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
HAT2210RWS-E by Renesas Electronics America Inc is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 24mOhm @ 3.75A, 10V, 22mOhm @ 4A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for HAT2210RWS-E
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All Technical Specifications
| FET Type | 2 N-Channel (Dual), Schottky |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Power - Max | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 3.75A, 10V, 22mOhm @ 4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 4.6nC @ 4.5V, 11nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 630pF @ 10V, 1330pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Ta), 8A (Ta) |
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