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Renesas Electronics America Inc6-SMD, Flat LeadsRoHS

HAT1069C-EL-E

MOSFET P-CH 12V 4A 6CMFPAK

Subcategory

Transistors Fets Mosfets Single

Package

6-SMD, Flat Leads

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandRenesas Electronics America Inc
ModelHAT1069C-EL-E
Package / Case6-SMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature150°C
FET TypeP-Channel
Drain to Source Voltage (Vdss)12 V
Rds On (Max)52mOhm @ 1.5A, 4.5V
Vgs(th) (Max)1.2V @ 1mA
Gate Charge (Qg)16 nC @ 4.5 V
Input Capacitance (Ciss)1380 pF @ 10 V
Power Dissipation (Max)900mW (Ta)
Drive Voltage1.8V, 4.5V
Supplier Device Package6-CMFPAK
RoHSRoHS
Part StatusObsolete

Application & Notes

HAT1069C-EL-E by Renesas Electronics America Inc is an N-channel power MOSFET rated at 12 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-SMD, Flat Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 52mOhm @ 1.5A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.2V @ 1mA
Rds On (Max) @ Id, Vgs52mOhm @ 1.5A, 4.5V
Power Dissipation (Max)900mW (Ta)
Gate Charge (Qg) (Max) @ Vgs16 nC @ 4.5 V
Drain to Source Voltage (Vdss)12 V
Input Capacitance (Ciss) (Max) @ Vds1380 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C4A (Ta)

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