GT60N321(Q)
IGBT 1000V 60A 170W TO3P LH
Transistors Igbts Single
TO-3PL
Obsolete
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | GT60N321(Q) |
| Package / Case | TO-3PL |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 170 W |
| Supplier Device Package | TO-3P(LH) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
GT60N321(Q) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-3PL package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for GT60N321(Q)
Alternatives & Replacements
View All →RJP4006AGE-00#P5
IGBTS, 400V, 120A, N-CHANNEL
TIG064E8-TL-H-ON
N-CHANNEL IGBT FOR LIGHT-CONTROL
IRG7PH35UD1-EP
IGBT W/ULTRA-LOW VF DIODE FOR IN
NGTB40N60IHLWG
IGBT 600V 40A TO247
RJP4005ANS-01#Q1
IGBTS, 400V, 150A, N-CHANNEL
FGPF70N30
IGBT 300V 52W TO220F
All Technical Specifications
| Input Type | Standard |
| Power - Max | 170 W |
| Td (on/off) @ 25°C | 330ns/700ns |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 60A |
| Reverse Recovery Time (trr) | 2.5 µs |
| Current - Collector (Ic) (Max) | 60 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.