GT50J121(Q)
IGBT 600V 50A 240W TO3P LH
Transistors Igbts Single
TO-3PL
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | GT50J121(Q) |
| Package / Case | TO-3PL |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 240 W |
| Supplier Device Package | TO-3P(LH) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
GT50J121(Q) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-3PL package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for GT50J121(Q)
Alternatives & Replacements
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NGTB40N60IHLWG
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RJP4005ANS-01#Q1
IGBTS, 400V, 150A, N-CHANNEL
FGPF70N30
IGBT 300V 52W TO220F
All Technical Specifications
| Input Type | Standard |
| Power - Max | 240 W |
| Test Condition | 300V, 50A, 13Ohm, 15V |
| Switching Energy | 1.3mJ (on), 1.34mJ (off) |
| Td (on/off) @ 25°C | 90ns/300ns |
| Vce(on) (Max) @ Vge, Ic | 2.45V @ 15V, 50A |
| Current - Collector (Ic) (Max) | 50 A |
| Current - Collector Pulsed (Icm) | 100 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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