GT30N135SRA,S1E
D-IGBT TO-247 VCES=1350V IC=30A
Transistors Igbts Single
TO-247-3
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | GT30N135SRA,S1E |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Power Dissipation (Max) | 348 W |
| Supplier Device Package | TO-247 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
GT30N135SRA,S1E by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for GT30N135SRA,S1E
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All Technical Specifications
| Input Type | Standard |
| Gate Charge | 270 nC |
| Power - Max | 348 W |
| Test Condition | 300V, 60A, 39Ohm, 15V |
| Switching Energy | -, 1.3mJ (off) |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 60A |
| Current - Collector (Ic) (Max) | 60 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 1350 V |
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