GT30J121(Q)
IGBT 600V 30A 170W TO3PN
Transistors Igbts Single
TO-3P-3, SC-65-3
Active
Price available on request
MOQ: 50 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | GT30J121(Q) |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Power Dissipation (Max) | 170 W |
| Supplier Device Package | TO-3P(N) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
GT30J121(Q) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-3P-3, SC-65-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for GT30J121(Q)
Alternatives & Replacements
View All →FGA20S120M
IGBT, 40A, 1200V, N-CHANNEL
SGH10N60RUFDTU
IGBT, 16A, 600V, N-CHANNEL
SGH40N60UFTU
IGBT 600V 40A TO3P
FGA25S125P
IGBT, 50A, 1250V, N-CHANNEL
FGA90N30DTU
IGBT, 90A, 300V, N-CHANNEL
FGA30T65SHD
IGBT TRENCH/FS 650V 60A TO3PN
All Technical Specifications
| Input Type | Standard |
| Power - Max | 170 W |
| Test Condition | 300V, 30A, 24Ohm, 15V |
| Switching Energy | 1mJ (on), 800µJ (off) |
| Td (on/off) @ 25°C | 90ns/300ns |
| Vce(on) (Max) @ Vge, Ic | 2.45V @ 15V, 30A |
| Current - Collector (Ic) (Max) | 30 A |
| Current - Collector Pulsed (Icm) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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