GT10J312(Q)
IGBT 600V 10A 60W TO220SM
Transistors Igbts Single
TO-252-3, DPak (2 Leads + Tab), SC-63
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | GT10J312(Q) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 60 W |
| Supplier Device Package | TO-220SM |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
GT10J312(Q) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for GT10J312(Q)
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All Technical Specifications
| Input Type | Standard |
| Power - Max | 60 W |
| Test Condition | 300V, 10A, 100Ohm, 15V |
| Td (on/off) @ 25°C | 400ns/400ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A |
| Reverse Recovery Time (trr) | 200 ns |
| Current - Collector (Ic) (Max) | 10 A |
| Current - Collector Pulsed (Icm) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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