GT10G131(TE12L,Q)
IGBT 400V 1W 8-SOIC
Transistors Igbts Single
8-SOIC (0.173", 4.40mm Width)
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | GT10G131(TE12L,Q) |
| Package / Case | 8-SOIC (0.173", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 1 W |
| Supplier Device Package | 8-SOP (5.5x6.0) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
GT10G131(TE12L,Q) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.173", 4.40mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for GT10G131(TE12L,Q)
Alternatives & Replacements
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IGBTS, 400V, 150A, N-CHANNEL
FGPF70N30
IGBT 300V 52W TO220F
All Technical Specifications
| Input Type | Standard |
| Power - Max | 1 W |
| Td (on/off) @ 25°C | 3.1µs/2µs |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 4V, 200A |
| Current - Collector Pulsed (Icm) | 200 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
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