GE12047BCA3
1200V 475A SIC DUAL MODULE
Transistors Fets Mosfets Arrays
Module
SiC Power
Active
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | General Electric |
| Model | GE12047BCA3 |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (Tc) |
| FET Type | 2 Independent |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Rds On (Max) | 4.4mOhm @ 475A, 20V |
| Vgs(th) (Max) | 4.5V @ 160mA |
| Gate Charge (Qg) | 1248nC @ 18V |
| Input Capacitance (Ciss) | 29.3nF @ 600V |
| Power Dissipation (Max) | 1250W |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
GE12047BCA3 by General Electric is an N-channel power MOSFET rated at 1200V (1.2kV) / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 4.4mOhm @ 475A, 20V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for GE12047BCA3
Alternatives & Replacements
View All →FF23MR12W1M1B11BOMA1
MOSFET 2 N-CH 1200V 50A MODULE
CAS120M12BM2
MOSFET 2N-CH 1200V 193A MODULE
DF11MR12W1M1B11BOMA1
MOSFET MODULE 1200V 50A
FF11MR12W1M1PB11BPSA1
MOSFET MODULE 1200V DUAL
DF23MR12W1M1B11BPSA1
MOSFET MOD 1200V 25A
FF11MR12W1M1B11BOMA1
MOSFET 2N-CH 1200V 100A MODULE
All Technical Specifications
| FET Type | 2 Independent |
| FET Feature | Silicon Carbide (SiC) |
| Power - Max | 1250W |
| Vgs(th) (Max) @ Id | 4.5V @ 160mA |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 475A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 1248nC @ 18V |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 29.3nF @ 600V |
| Current - Continuous Drain (Id) @ 25°C | 475A |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.