GE10020
NPN DARLINGTON POWER TRANSISTOR
Transistors Bipolar Bjt Single
TO-204AE
Active
Price available on request
MOQ: 69 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | GE10020 |
| Package / Case | TO-204AE |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Power Dissipation (Max) | 250 W |
| Supplier Device Package | TO-204AE |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
GE10020 by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-204AE package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for GE10020
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All Technical Specifications
| Power - Max | 250 W |
| Transistor Type | NPN - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 2.4V @ 1.2A, 30A |
| Current - Collector (Ic) (Max) | 60 A |
| Current - Collector Cutoff (Max) | 250µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 600 @ 15A, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
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