FZ1200R45KL3B5NOSA1
IGBT MODULE 4500V 1200A
Transistors Igbts Modules
Module
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | FZ1200R45KL3B5NOSA1 |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | -50°C ~ 125°C |
| Power Dissipation (Max) | 13500 W |
| Supplier Device Package | Module |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FZ1200R45KL3B5NOSA1 by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FZ1200R45KL3B5NOSA1
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All Technical Specifications
| Input | Standard |
| Power - Max | 13500 W |
| Configuration | Single |
| NTC Thermistor | No |
| Vce(on) (Max) @ Vge, Ic | 2.85V @ 15V, 1200A |
| Current - Collector (Ic) (Max) | 1200 A |
| Input Capacitance (Cies) @ Vce | 280 nF @ 25 V |
| Current - Collector Cutoff (Max) | 5 mA |
| Voltage - Collector Emitter Breakdown (Max) | 4500 V |
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