FS03MR12A6MA1BBPSA1
HYBRID PACK DRIVE SIC AG-HYBRIDD
Transistors Fets Mosfets Arrays
Module
HybridPACK™
Active
Price available on request
MOQ: 6 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | FS03MR12A6MA1BBPSA1 |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Rds On (Max) | 3.7mOhm @ 400A, 15V |
| Vgs(th) (Max) | 5.55V @ 240mA |
| Gate Charge (Qg) | 1320nC @ 15V |
| Input Capacitance (Ciss) | 42.5nF @ 600V |
| Power Dissipation (Max) | 20mW |
| Supplier Device Package | AG-HYBRIDD-2 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FS03MR12A6MA1BBPSA1 by Infineon Technologies is an N-channel power MOSFET rated at 1200V (1.2kV) / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.7mOhm @ 400A, 15V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FS03MR12A6MA1BBPSA1
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All Technical Specifications
| FET Feature | Silicon Carbide (SiC) |
| Power - Max | 20mW |
| Vgs(th) (Max) @ Id | 5.55V @ 240mA |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 400A, 15V |
| Gate Charge (Qg) (Max) @ Vgs | 1320nC @ 15V |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 42.5nF @ 600V |
| Current - Continuous Drain (Id) @ 25°C | 400A (Tj) |
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