FP35R12W2T7BPSA1
LOW POWER EASY AG-EASY2B-711
Transistors Igbts Modules
Module
EasyPIM™
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | FP35R12W2T7BPSA1 |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Power Dissipation (Max) | 20 mW |
| Supplier Device Package | AG-EASY1B-2 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FP35R12W2T7BPSA1 by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FP35R12W2T7BPSA1
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All Technical Specifications
| Input | Three Phase Bridge Rectifier |
| IGBT Type | Trench Field Stop |
| Power - Max | 20 mW |
| Configuration | Three Phase Inverter |
| NTC Thermistor | Yes |
| Current - Collector (Ic) (Max) | 35 A |
| Input Capacitance (Cies) @ Vce | 6.62 nF @ 25 V |
| Current - Collector Cutoff (Max) | 5.8 µA |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
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