FP15R12W1T7B3BOMA1
IGBT MODULE LOW POWER EASY
Transistors Igbts Modules
Module
TrenchStop™
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | FP15R12W1T7B3BOMA1 |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | 175°C (TJ) |
| Supplier Device Package | AG-EASY1B-2 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FP15R12W1T7B3BOMA1 by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FP15R12W1T7B3BOMA1
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All Technical Specifications
| Input | Standard |
| IGBT Type | Trench Field Stop |
| Configuration | Half Bridge Inverter |
| NTC Thermistor | No |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
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