FN4L4M-T1B-A
PROGRAM ADAPTER
Transistors Bipolar Bjt Single Pre Biased
-
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Renesas Electronics America Inc |
| Model | FN4L4M-T1B-A |
| Power Dissipation (Max) | 200 mW |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
FN4L4M-T1B-A by Renesas Electronics America Inc is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The - package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FN4L4M-T1B-A
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All Technical Specifications
| Power - Max | 200 mW |
| Transistor Type | NPN - Pre-Biased |
| Resistor - Base (R1) | 22 Ohms |
| Resistor - Emitter Base (R2) | 22 Ohms |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 250µ, 5mA |
| Current - Collector (Ic) (Max) | 100 mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 5mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
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