FMM110-015X2F
MOSFET 2N-CH 150V 53A I4-PAC
Transistors Fets Mosfets Arrays
i4-Pac™-5
GigaMOS™, HiPerFET™, TrenchT2™
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | FMM110-015X2F |
| Package / Case | i4-Pac™-5 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 150V |
| Rds On (Max) | 20mOhm @ 55A, 10V |
| Vgs(th) (Max) | 4.5V @ 250µA |
| Gate Charge (Qg) | 150nC @ 10V |
| Input Capacitance (Ciss) | 8600pF @ 25V |
| Power Dissipation (Max) | 180W |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FMM110-015X2F by IXYS is an N-channel power MOSFET rated at 150V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The i4-Pac™-5 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 20mOhm @ 55A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FMM110-015X2F
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 180W |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 55A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 150nC @ 10V |
| Drain to Source Voltage (Vdss) | 150V |
| Input Capacitance (Ciss) (Max) @ Vds | 8600pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 53A |
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