FGY120T65SPD-F085
IGBT 650V 240A 882W TO-247
Transistors Igbts Single
TO-247-3
Automotive, AEC-Q101
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | FGY120T65SPD-F085 |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max) | 882 W |
| Supplier Device Package | TO-247-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FGY120T65SPD-F085 by onsemi is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FGY120T65SPD-F085
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All Technical Specifications
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Gate Charge | 162 nC |
| Power - Max | 882 W |
| Test Condition | 400V, 120A, 5Ohm, 15V |
| Switching Energy | 6.8µJ (on), 3.5µJ (off) |
| Td (on/off) @ 25°C | 53ns/102ns |
| Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 120A |
| Reverse Recovery Time (trr) | 123 ns |
| Current - Collector (Ic) (Max) | 240 A |
| Current - Collector Pulsed (Icm) | 378 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
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