FF6MR12W2M1B70BPSA1
LOW POWER EASY AG-EASY2B-2
Transistors Fets Mosfets Arrays
Module
CoolSiC™+
Active
$404.60 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | FF6MR12W2M1B70BPSA1 |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Half Bridge) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Rds On (Max) | 5.63mOhm @ 200A, 15V |
| Vgs(th) (Max) | 5.55V @ 80mA |
| Gate Charge (Qg) | 496nC @ 15V |
| Input Capacitance (Ciss) | 14.7nF @ 800V |
| Power Dissipation (Max) | 20mW (Tc) |
| Supplier Device Package | AG-EASY2B |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FF6MR12W2M1B70BPSA1 by Infineon Technologies is an N-channel power MOSFET rated at 1200V (1.2kV) / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 5.63mOhm @ 200A, 15V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FF6MR12W2M1B70BPSA1
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All Technical Specifications
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | Silicon Carbide (SiC) |
| Power - Max | 20mW (Tc) |
| Vgs(th) (Max) @ Id | 5.55V @ 80mA |
| Rds On (Max) @ Id, Vgs | 5.63mOhm @ 200A, 15V |
| Gate Charge (Qg) (Max) @ Vgs | 496nC @ 15V |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 14.7nF @ 800V |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tj) |
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