FDS6990S
N-CHANNEL POWER MOSFET
Transistors Fets Mosfets Arrays
8-SOIC (0.154", 3.90mm Width)
PowerTrench®
Active
$0.94 / unit (market reference)
MOQ: 321 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FDS6990S |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 22mOhm @ 7.5A, 10V |
| Vgs(th) (Max) | 3V @ 1mA |
| Gate Charge (Qg) | 16nC @ 5V |
| Input Capacitance (Ciss) | 1233pF @ 15V |
| Power Dissipation (Max) | 900mW (Ta) |
| Supplier Device Package | 8-SOIC |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FDS6990S by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 22mOhm @ 7.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FDS6990S
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MOSFET 2N-CH 35V 4.5A 8SOIC
All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 900mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 7.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 5V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1233pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Ta) |
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