onsemi6-PowerWDFNRoHS
FDMA008P20LZ
MOSFET P-CHANNEL 20V 12A 6PQFN
Category
Subcategory
Transistors Fets Mosfets Single
Package
6-PowerWDFN
Status
Obsolete
Datasheet
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | FDMA008P20LZ |
| Package / Case | 6-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 13mOhm @ 2.5A, 4.5V |
| Vgs(th) (Max) | 1.4V @ 250µA |
| Gate Charge (Qg) | 39 nC @ 4.5 V |
| Input Capacitance (Ciss) | 4383 pF @ 10 V |
| Power Dissipation (Max) | 2.4W (Ta) |
| Drive Voltage | 1.5V, 4.5V |
| Supplier Device Package | 6-PQFN (2x2) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
FDMA008P20LZ by onsemi is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-PowerWDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 13mOhm @ 2.5A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FDMA008P20LZ
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 2.5A, 4.5V |
| Power Dissipation (Max) | 2.4W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4383 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
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