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Rochester Electronics, LLCTO-252-3, DPak (2 Leads + Tab), SC-63RoHS

FDD6780A

16.4A, 25V, 0.0086OHM, N-CHANNEL

FDD6780A by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-252-3, DPak (2 Leads + Tab), SC-63

Series

PowerTrench®

Status

Active

Price available on request

MOQ: 628 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelFDD6780A
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)25 V
Rds On (Max)8.6mOhm @ 16.4A, 10V
Vgs(th) (Max)3V @ 250µA
Gate Charge (Qg)24 nC @ 10 V
Input Capacitance (Ciss)1235 pF @ 13 V
Power Dissipation (Max)3.7W (Ta), 32.6W (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackageD-PAK (TO-252)
RoHSRoHS
Part StatusActive

Application & Notes

FDD6780A by Rochester Electronics, LLC is an N-channel power MOSFET rated at 25 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 8.6mOhm @ 16.4A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA
Rds On (Max) @ Id, Vgs8.6mOhm @ 16.4A, 10V
Power Dissipation (Max)3.7W (Ta), 32.6W (Tc)
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Drain to Source Voltage (Vdss)25 V
Input Capacitance (Ciss) (Max) @ Vds1235 pF @ 13 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C16.4A (Ta), 30A (Tc)

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