FCH041N65EFL4
POWER FIELD-EFFECT TRANSISTOR, N
Transistors Fets Mosfets Single
TO-247-4
FRFET®, SuperFET® II
Active
$7.45 / unit (market reference)
MOQ: 41 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FCH041N65EFL4 |
| Package / Case | TO-247-4 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 650 V |
| Rds On (Max) | 41mOhm @ 38A, 10V |
| Vgs(th) (Max) | 5V @ 7.6mA |
| Gate Charge (Qg) | 298 nC @ 10 V |
| Input Capacitance (Ciss) | 12560 pF @ 100 V |
| Power Dissipation (Max) | 595W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | TO-247 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FCH041N65EFL4 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-4 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 41mOhm @ 38A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FCH041N65EFL4
Alternatives & Replacements
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SICFET N-CH 1000V 22A TO247-4L
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 5V @ 7.6mA |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 38A, 10V |
| Power Dissipation (Max) | 595W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 298 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12560 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 76A (Tc) |
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