FCH029N65S3-F155
MOSFET N-CH 650V 75A TO247-3
Transistors Fets Mosfets Single
TO-247-3
SuperFET® III
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | FCH029N65S3-F155 |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 650 V |
| Rds On (Max) | 29mOhm @ 37.5A, 10V |
| Vgs(th) (Max) | 4.5V @ 7mA |
| Gate Charge (Qg) | 201 nC @ 10 V |
| Input Capacitance (Ciss) | 6340 pF @ 400 V |
| Power Dissipation (Max) | 463W (Tc) |
| Supplier Device Package | TO-247-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FCH029N65S3-F155 by onsemi is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 29mOhm @ 37.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FCH029N65S3-F155
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4.5V @ 7mA |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 37.5A, 10V |
| Power Dissipation (Max) | 463W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 201 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6340 pF @ 400 V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
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