EC4H09C-TL-H
RF TRANS NPN 3.5V 26GHZ ECSP1008

Transistors Bipolar Bjt Rf
4-UFDFN
Obsolete
Price available on request
MOQ: 473 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | EC4H09C-TL-H |
| Package / Case | 4-UFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 120mW |
| Supplier Device Package | 4-ECSP1008 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
EC4H09C-TL-H by onsemi is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 4-UFDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for EC4H09C-TL-H
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All Technical Specifications
| Gain | 15dB |
| Power - Max | 120mW |
| Transistor Type | NPN |
| Frequency - Transition | 26GHz |
| Noise Figure (dB Typ @ f) | 1.3dB @ 2GHz |
| Current - Collector (Ic) (Max) | 40mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 5mA, 1V |
| Voltage - Collector Emitter Breakdown (Max) | 3.5V |
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