DXT5551P5-13
TRANS NPN 160V 0.6A POWERDI5
Transistors Bipolar Bjt Single
PowerDI™ 5
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Diodes Incorporated |
| Model | DXT5551P5-13 |
| Package / Case | PowerDI™ 5 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 2.25 W |
| Supplier Device Package | PowerDI™ 5 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
DXT5551P5-13 by Diodes Incorporated is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The PowerDI™ 5 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for DXT5551P5-13
Alternatives & Replacements
View All →DXT458P5-13
TRANS NPN 400V 0.3A POWERDI5
DXTP03200BP5-13
TRANS PNP 200V 2A POWERDI5
DXT2013P5-13
TRANS PNP 100V 5A POWERDI5
DXT2012P5-13
TRANS PNP 60V 5.5A POWERDI5
DXT2011P5Q-13
PWR LOW SAT TRANSISTOR PDI5
DXTP560BP5-13
TRANS PNP 500V 0.15A POWERDI5
All Technical Specifications
| Power - Max | 2.25 W |
| Transistor Type | NPN |
| Frequency - Transition | 130MHz |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| Current - Collector (Ic) (Max) | 600 mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
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