DRDNB16W-7
TRANS PREBIAS NPN/DIODE SOT363
Transistors Bipolar Bjt Single Pre Biased
6-TSSOP, SC-88, SOT-363
Active
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Diodes Incorporated |
| Model | DRDNB16W-7 |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Power Dissipation (Max) | 200 mW |
| Supplier Device Package | SOT-363 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
DRDNB16W-7 by Diodes Incorporated is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-TSSOP, SC-88, SOT-363 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for DRDNB16W-7
Alternatives & Replacements
View All →MMUN2215LT1G
TRANS PREBIAS NPN 50V SOT23-3
DTC144EM3T5G
TRANS PREBIAS NPN 50V SOT723
MMUN2238LT1G
TRANS PREBIAS NPN 50V SOT23-3
MUN2211T3G
TRANS PREBIAS NPN 50V 100MA SC59
DDTD113ZC-7-F
TRANS PREBIAS NPN 200MW SOT23-3
PDTA114EE,115-NXP
0.1A, 50V, PNP
All Technical Specifications
| Power - Max | 200 mW |
| Transistor Type | NPN - Pre-Biased |
| Resistor - Base (R1) | 1 kOhms |
| Frequency - Transition | 200 MHz |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector (Ic) (Max) | 600 mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 50mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.