DP0150BLP4-7
TRANS NPN 50V 0.1A DFN1006H4
Transistors Bipolar Bjt Single
3-XFDFN
Active
$0.44 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Diodes Incorporated |
| Model | DP0150BLP4-7 |
| Package / Case | 3-XFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 450 mW |
| Supplier Device Package | X2-DFN1006-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
DP0150BLP4-7 by Diodes Incorporated is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 3-XFDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for DP0150BLP4-7
Alternatives & Replacements
View All →BC857AMB,315
TRANS PNP 45V 100MA DFN1006B-3
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BC847BFA-7B
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All Technical Specifications
| Power - Max | 450 mW |
| Transistor Type | NPN |
| Frequency - Transition | 80MHz |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector (Ic) (Max) | 100 mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
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