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MOQ varies by availability. Contact us with your required quantity — we support small-batch and prototype orders. Typical MOQ starts from 1 pcs.

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Microchip TechnologyTO-252-3, DPak (2 Leads + Tab), SC-63RoHS

DN3765K4-G

Name: DN3765K4-G
Brand: Microchip Technology
SKU: DN3765K4-G

MOSFET N-CH 650V 300MA TO252-3

Parameters

Parameter	Value
Brand	Microchip Technology
Model	DN3765K4-G
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
FET Type	N-Channel
Drain to Source Voltage (Vdss)	650 V
Rds On (Max)	8Ohm @ 150mA, 0V
Input Capacitance (Ciss)	825 pF @ 25 V
Power Dissipation (Max)	2.5W (Ta)
Drive Voltage	0V
Supplier Device Package	TO-252-3
RoHS	RoHS
Part Status	Active

Application & Notes

DN3765K4-G by Microchip Technology is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 8Ohm @ 150mA, 0V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	Depletion Mode
Rds On (Max) @ Id, Vgs	8Ohm @ 150mA, 0V
Power Dissipation (Max)	2.5W (Ta)
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	825 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	0V
Current - Continuous Drain (Id) @ 25°C	300mA (Tj)

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