DMT3011LDT-7
MOSFET 2N-CH 30V 8A V-DFN3030-8
Transistors Fets Mosfets Arrays
8-VDFN Exposed Pad
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MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Diodes Incorporated |
| Model | DMT3011LDT-7 |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 155°C (TJ) |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 20mOhm @ 6A, 10V |
| Vgs(th) (Max) | 3V @ 250µA |
| Gate Charge (Qg) | 13.2nC @ 10V |
| Input Capacitance (Ciss) | 641pF @ 15V |
| Power Dissipation (Max) | 1.9W |
| Supplier Device Package | V-DFN3030-8 (Type K) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
DMT3011LDT-7 by Diodes Incorporated is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-VDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 20mOhm @ 6A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for DMT3011LDT-7
Alternatives & Replacements
View All →NTLTD7900ZR2G
MOSFET 2N-CH 20V 6A 8MICRO
AONX38168
25V DUAL ASYMMETRIC N-CHANNEL XS
ZXMC3AM832TA
MOSFET N/P-CH 30V 2.9A/2.1A 8MLP
All Technical Specifications
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Standard |
| Power - Max | 1.9W |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 13.2nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 641pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 8A, 10.7A |
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