DMP25H18DLFDE-7
MOSFET P-CH 250V 260MA 6UDFN
Transistors Fets Mosfets Single
6-PowerUDFN
Active
$1.52 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Diodes Incorporated |
| Model | DMP25H18DLFDE-7 |
| Package / Case | 6-PowerUDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 250 V |
| Rds On (Max) | 14Ohm @ 200mA, 10V |
| Vgs(th) (Max) | 2.5V @ 1mA |
| Gate Charge (Qg) | 2.8 nC @ 10 V |
| Input Capacitance (Ciss) | 81 pF @ 25 V |
| Power Dissipation (Max) | 600mW (Ta) |
| Drive Voltage | 3.5V, 10V |
| Supplier Device Package | U-DFN2020-6 (Type E) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
DMP25H18DLFDE-7 by Diodes Incorporated is an N-channel power MOSFET rated at 250 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-PowerUDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 14Ohm @ 200mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for DMP25H18DLFDE-7
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±40V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 14Ohm @ 200mA, 10V |
| Power Dissipation (Max) | 600mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 2.8 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 250 V |
| Input Capacitance (Ciss) (Max) @ Vds | 81 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 3.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 260mA (Ta) |
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