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Diodes Incorporated4-UFBGA, WLBGARoHS

DMP1081UCB4-7

MOSFET P-CH 12V 3A U-WLB1010-4

DMP1081UCB4-7 by Diodes Incorporated
Subcategory

Transistors Fets Mosfets Single

Package

4-UFBGA, WLBGA

Status

Last Time Buy

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandDiodes Incorporated
ModelDMP1081UCB4-7
Package / Case4-UFBGA, WLBGA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)12 V
Rds On (Max)10Ohm @ 100mA, 0.9V
Vgs(th) (Max)650mV @ 250µA
Gate Charge (Qg)5 nC @ 4.5 V
Input Capacitance (Ciss)350 pF @ 6 V
Power Dissipation (Max)820mW (Ta)
Drive Voltage0.9V, 4.5V
Supplier Device PackageU-WLB1010-4
RoHSRoHS
Part StatusLast Time Buy

Application & Notes

DMP1081UCB4-7 by Diodes Incorporated is an N-channel power MOSFET rated at 12 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 4-UFBGA, WLBGA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 10Ohm @ 100mA, 0.9V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)-6V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id650mV @ 250µA
Rds On (Max) @ Id, Vgs10Ohm @ 100mA, 0.9V
Power Dissipation (Max)820mW (Ta)
Gate Charge (Qg) (Max) @ Vgs5 nC @ 4.5 V
Drain to Source Voltage (Vdss)12 V
Input Capacitance (Ciss) (Max) @ Vds350 pF @ 6 V
Drive Voltage (Max Rds On, Min Rds On)0.9V, 4.5V
Current - Continuous Drain (Id) @ 25°C3A (Ta), 3.3A (Ta)

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