DMN2023UCB4-7
MOSFET 2N-CH X1-WLB1818-4
Transistors Fets Mosfets Arrays
4-XFBGA, WLBGA
Automotive, AEC-Q101
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Diodes Incorporated |
| Model | DMN2023UCB4-7 |
| Package / Case | 4-XFBGA, WLBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) Common Drain |
| Drain to Source Voltage (Vdss) | 24V |
| Vgs(th) (Max) | 1.3V @ 1mA |
| Gate Charge (Qg) | 37nC @ 4.5V |
| Input Capacitance (Ciss) | 3333pF @ 10V |
| Power Dissipation (Max) | 1.45W |
| Supplier Device Package | X1-WLB1818-4 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
DMN2023UCB4-7 by Diodes Incorporated is an N-channel power MOSFET rated at 24V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 4-XFBGA, WLBGA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max -. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for DMN2023UCB4-7
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) Common Drain |
| FET Feature | Standard |
| Power - Max | 1.45W |
| Vgs(th) (Max) @ Id | 1.3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 37nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 24V |
| Input Capacitance (Ciss) (Max) @ Vds | 3333pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
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