DMN2011UFX-7
MOSFET 2N-CH 20V 12.2A DFN2050-4
Transistors Fets Mosfets Arrays
4-VFDFN Exposed Pad
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MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Diodes Incorporated |
| Model | DMN2011UFX-7 |
| Package / Case | 4-VFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 9.5mOhm @ 10A, 4.5V |
| Vgs(th) (Max) | 1V @ 250µA |
| Gate Charge (Qg) | 56nC @ 10V |
| Input Capacitance (Ciss) | 2248pF @ 10V |
| Power Dissipation (Max) | 2.1W |
| Supplier Device Package | V-DFN2050-4 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
DMN2011UFX-7 by Diodes Incorporated is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 4-VFDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 9.5mOhm @ 10A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for DMN2011UFX-7
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 2.1W |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 10A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 56nC @ 10V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2248pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 12.2A (Ta) |
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