DMN1250UFEL-7
MOSFET BVDSS: 8V 24V U-QFN1515-1
Transistors Fets Mosfets Arrays
12-UFQFN Exposed Pad
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MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Diodes Incorporated |
| Model | DMN1250UFEL-7 |
| Package / Case | 12-UFQFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 8 N-Channel, Common Gate, Common Source |
| Drain to Source Voltage (Vdss) | 12V |
| Rds On (Max) | 450mOhm @ 200mA, 4.5V |
| Vgs(th) (Max) | 1V @ 250µA |
| Gate Charge (Qg) | 1.9nC @ 4.5V |
| Input Capacitance (Ciss) | 190pF @ 6V |
| Power Dissipation (Max) | 660mW |
| Supplier Device Package | U-QFN1515-12 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
DMN1250UFEL-7 by Diodes Incorporated is an N-channel power MOSFET rated at 12V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 12-UFQFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 450mOhm @ 200mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for DMN1250UFEL-7
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All Technical Specifications
| FET Type | 8 N-Channel, Common Gate, Common Source |
| FET Feature | Standard |
| Power - Max | 660mW |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 200mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.9nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 12V |
| Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 6V |
| Current - Continuous Drain (Id) @ 25°C | 2A |
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