DMN1033UCB4-7
MOSFET 2N-CH 12V U-WLB1818-4
Transistors Fets Mosfets Arrays
4-UFBGA, WLBGA
Last Time Buy
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Diodes Incorporated |
| Model | DMN1033UCB4-7 |
| Package / Case | 4-UFBGA, WLBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) Common Drain |
| Gate Charge (Qg) | 37nC @ 4.5V |
| Power Dissipation (Max) | 1.45W |
| Supplier Device Package | U-WLB1818-4 |
| RoHS | RoHS |
| Part Status | Last Time Buy |
Application & Notes
DMN1033UCB4-7 by Diodes Incorporated is an N-channel power MOSFET rated at - / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 4-UFBGA, WLBGA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max -. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for DMN1033UCB4-7
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) Common Drain |
| FET Feature | Logic Level Gate |
| Power - Max | 1.45W |
| Gate Charge (Qg) (Max) @ Vgs | 37nC @ 4.5V |
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