DMHT6016LFJ-13
MOSFET 4 N-CH 14.8A VDFN5045-12
Transistors Fets Mosfets Arrays
12-VDFN Exposed Pad
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Parameters
| Parameter | Value |
|---|---|
| Brand | Diodes Incorporated |
| Model | DMHT6016LFJ-13 |
| Package / Case | 12-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 4 N-Channel |
| Rds On (Max) | 22mOhm @ 10A, 10V |
| Vgs(th) (Max) | 3V @ 250µA |
| Gate Charge (Qg) | 8.4nC @ 4.5V |
| Input Capacitance (Ciss) | 864pF @ 30V |
| Supplier Device Package | V-DFN5045-12 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
DMHT6016LFJ-13 by Diodes Incorporated is an N-channel power MOSFET rated at - / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 12-VDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 22mOhm @ 10A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for DMHT6016LFJ-13
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All Technical Specifications
| FET Type | 4 N-Channel |
| FET Feature | Standard |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 8.4nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 864pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 14.8A (Ta) |
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