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Diodes Incorporated8-SOIC (0.154", 3.90mm Width)RoHS

DMC3016LSD-13

MOSFET N/P-CH 30V 8.2A/6.2A 8SO

DMC3016LSD-13 by Diodes Incorporated
Subcategory

Transistors Fets Mosfets Arrays

Package

8-SOIC (0.154", 3.90mm Width)

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandDiodes Incorporated
ModelDMC3016LSD-13
Package / Case8-SOIC (0.154", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN and P-Channel
Drain to Source Voltage (Vdss)30V
Rds On (Max)16mOhm @ 12A, 10V
Vgs(th) (Max)2.3V @ 250µA
Gate Charge (Qg)25.1nC @ 10V
Input Capacitance (Ciss)1415pF @ 15V
Power Dissipation (Max)1.2W
Supplier Device Package8-SO
RoHSRoHS
Part StatusActive

Application & Notes

DMC3016LSD-13 by Diodes Incorporated is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 16mOhm @ 12A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN and P-Channel
FET FeatureLogic Level Gate
Power - Max1.2W
Vgs(th) (Max) @ Id2.3V @ 250µA
Rds On (Max) @ Id, Vgs16mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs25.1nC @ 10V
Drain to Source Voltage (Vdss)30V
Input Capacitance (Ciss) (Max) @ Vds1415pF @ 15V
Current - Continuous Drain (Id) @ 25°C8.2A, 6.2A

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