CSD88599Q5DC
MOSFET 2 N-CH 60V 22-VSON-CLIP
Transistors Fets Mosfets Arrays
22-PowerTFDFN
NexFET™
Active
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MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Texas Instruments |
| Model | CSD88599Q5DC |
| Package / Case | 22-PowerTFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Half Bridge) |
| Drain to Source Voltage (Vdss) | 60V |
| Rds On (Max) | 2.1mOhm @ 30A, 10V |
| Vgs(th) (Max) | 2.5V @ 250µA |
| Gate Charge (Qg) | 27nC @ 4.5V |
| Input Capacitance (Ciss) | 4840pF @ 30V |
| Power Dissipation (Max) | 12W |
| Supplier Device Package | 22-VSON-CLIP (5x6) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
CSD88599Q5DC by Texas Instruments is an N-channel power MOSFET rated at 60V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 22-PowerTFDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 2.1mOhm @ 30A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for CSD88599Q5DC
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All Technical Specifications
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | Standard |
| Power - Max | 12W |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 30A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 60V |
| Input Capacitance (Ciss) (Max) @ Vds | 4840pF @ 30V |
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