CSD86311W1723
MOSFET 2N-CH 25V 4.5A 12DSBGA
Transistors Fets Mosfets Arrays
12-UFBGA, DSBGA
NexFET™
Active
Price available on request
MOQ: 626 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Texas Instruments |
| Model | CSD86311W1723 |
| Package / Case | 12-UFBGA, DSBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 25V |
| Rds On (Max) | 39mOhm @ 2A, 8V |
| Vgs(th) (Max) | 1.4V @ 250µA |
| Gate Charge (Qg) | 4nC @ 4.5V |
| Input Capacitance (Ciss) | 585pF @ 12.5V |
| Power Dissipation (Max) | 1.5W |
| Supplier Device Package | 12-DSBGA |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
CSD86311W1723 by Texas Instruments is an N-channel power MOSFET rated at 25V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 12-UFBGA, DSBGA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 39mOhm @ 2A, 8V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for CSD86311W1723
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 1.5W |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 2A, 8V |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 25V |
| Input Capacitance (Ciss) (Max) @ Vds | 585pF @ 12.5V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
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