CSD75208W1015T
MOSFET 2P-CH 20V 1.6A 6WLP
Transistors Fets Mosfets Arrays
6-UFBGA, DSBGA
NexFET™
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Texas Instruments |
| Model | CSD75208W1015T |
| Package / Case | 6-UFBGA, DSBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 P-Channel (Dual) Common Source |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 68mOhm @ 1A, 4.5V |
| Vgs(th) (Max) | 1.1V @ 250µA |
| Gate Charge (Qg) | 2.5nC @ 4.5V |
| Input Capacitance (Ciss) | 410pF @ 10V |
| Power Dissipation (Max) | 750mW |
| Supplier Device Package | 6-DSBGA (1x1.5) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
CSD75208W1015T by Texas Instruments is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-UFBGA, DSBGA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 68mOhm @ 1A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for CSD75208W1015T
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All Technical Specifications
| FET Type | 2 P-Channel (Dual) Common Source |
| FET Feature | Logic Level Gate |
| Power - Max | 750mW |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 68mOhm @ 1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 410pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A |
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