CSD75207W15
MOSFET 2P-CH 3.9A 9DSBGA
Transistors Fets Mosfets Arrays
9-UFBGA, DSBGA
NexFET™
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Texas Instruments |
| Model | CSD75207W15 |
| Package / Case | 9-UFBGA, DSBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 P-Channel (Dual) Common Source |
| Rds On (Max) | 162mOhm @ 1A, 1.8V |
| Vgs(th) (Max) | 1.1V @ 250µA |
| Gate Charge (Qg) | 3.7nC @ 4.5V |
| Input Capacitance (Ciss) | 595pF @ 10V |
| Power Dissipation (Max) | 700mW |
| Supplier Device Package | 9-DSBGA |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
CSD75207W15 by Texas Instruments is an N-channel power MOSFET rated at - / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 9-UFBGA, DSBGA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 162mOhm @ 1A, 1.8V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for CSD75207W15
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All Technical Specifications
| FET Type | 2 P-Channel (Dual) Common Source |
| FET Feature | Logic Level Gate |
| Power - Max | 700mW |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 162mOhm @ 1A, 1.8V |
| Gate Charge (Qg) (Max) @ Vgs | 3.7nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 595pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.9A |
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