Texas Instruments9-UFBGA, DSBGARoHS
CSD22206WT
MOSFET P-CH 8V 5A 9DSBGA
Category
Subcategory
Transistors Fets Mosfets Single
Package
9-UFBGA, DSBGA
Series
NexFET™
Status
Active
Datasheet
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Texas Instruments |
| Model | CSD22206WT |
| Package / Case | 9-UFBGA, DSBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 8 V |
| Rds On (Max) | 5.7mOhm @ 2A, 4.5V |
| Vgs(th) (Max) | 1.05V @ 250µA |
| Gate Charge (Qg) | 14.6 nC @ 4.5 V |
| Input Capacitance (Ciss) | 2275 pF @ 4 V |
| Power Dissipation (Max) | 1.7W (Ta) |
| Drive Voltage | 2.5V, 4.5V |
| Supplier Device Package | 9-DSBGA |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
CSD22206WT by Texas Instruments is an N-channel power MOSFET rated at 8 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 9-UFBGA, DSBGA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 5.7mOhm @ 2A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for CSD22206WT
Alternatives & Replacements
View All →All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | -6V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.05V @ 250µA |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 2A, 4.5V |
| Power Dissipation (Max) | 1.7W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 14.6 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2275 pF @ 4 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
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