CSD13302WT
MOSFET N-CH 12V 1.6A 4DSBGA
Transistors Fets Mosfets Single
4-UFBGA, DSBGA
NexFET™
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Texas Instruments |
| Model | CSD13302WT |
| Package / Case | 4-UFBGA, DSBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 12 V |
| Rds On (Max) | 17.1mOhm @ 1A, 4.5V |
| Vgs(th) (Max) | 1.3V @ 250µA |
| Gate Charge (Qg) | 7.8 nC @ 4.5 V |
| Input Capacitance (Ciss) | 862 pF @ 6 V |
| Power Dissipation (Max) | 1.8W (Ta) |
| Drive Voltage | 2.5V, 4.5V |
| Supplier Device Package | 4-DSBGA (1x1) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
CSD13302WT by Texas Instruments is an N-channel power MOSFET rated at 12 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 4-UFBGA, DSBGA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 17.1mOhm @ 1A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for CSD13302WT
Alternatives & Replacements
View All →CSD23201W10
MOSFET P-CH 12V 2.2A 4DSBGA
CSD13201W10
MOSFET N-CH 12V 1.6A 4DSBGA
CSD23202W10
MOSFET P-CH 12V 2.2A 4DSBGA
CSD23202W10T
MOSFET P-CH 12V 2.2A 4DSBGA
CSD25213W10
MOSFET P-CH 20V 1.6A 4DSBGA
CSD13302W
MOSFET N-CH 12V 1.6A 4DSBGA
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±10V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.3V @ 250µA |
| Rds On (Max) @ Id, Vgs | 17.1mOhm @ 1A, 4.5V |
| Power Dissipation (Max) | 1.8W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 7.8 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 12 V |
| Input Capacitance (Ciss) (Max) @ Vds | 862 pF @ 6 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
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