CCS050M12CM2
MOSFET 6N-CH 1200V 87A MODULE

Transistors Fets Mosfets Arrays
Module
Z-FET™ Z-Rec™
Not For New Designs
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Wolfspeed, Inc. |
| Model | CCS050M12CM2 |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | 6 N-Channel (3-Phase Bridge) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Rds On (Max) | 34mOhm @ 50A, 20V |
| Vgs(th) (Max) | 2.3V @ 2.5mA |
| Gate Charge (Qg) | 180nC @ 20V |
| Input Capacitance (Ciss) | 2.810nF @ 800V |
| Power Dissipation (Max) | 337W |
| Supplier Device Package | Module |
| RoHS | RoHS |
| Part Status | Not For New Designs |
Application & Notes
CCS050M12CM2 by Wolfspeed, Inc. is an N-channel power MOSFET rated at 1200V (1.2kV) / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 34mOhm @ 50A, 20V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for CCS050M12CM2
Alternatives & Replacements
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MOSFET MOD 1200V 25A
FF11MR12W1M1B11BOMA1
MOSFET 2N-CH 1200V 100A MODULE
All Technical Specifications
| FET Type | 6 N-Channel (3-Phase Bridge) |
| FET Feature | Silicon Carbide (SiC) |
| Power - Max | 337W |
| Vgs(th) (Max) @ Id | 2.3V @ 2.5mA |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 50A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 180nC @ 20V |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 2.810nF @ 800V |
| Current - Continuous Drain (Id) @ 25°C | 87A (Tc) |
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