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NXP USA Inc.TO-262-3 Long Leads, I²Pak, TO-262AARoHS

BUK9E3R7-60E,127

MOSFET N-CH 60V 120A I2PAK

BUK9E3R7-60E,127 by NXP USA Inc.
Subcategory

Transistors Fets Mosfets Single

Package

TO-262-3 Long Leads, I²Pak, TO-262AA

Series

TrenchMOS™

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandNXP USA Inc.
ModelBUK9E3R7-60E,127
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)60 V
Rds On (Max)3.4mOhm @ 25A, 10V
Vgs(th) (Max)2.1V @ 1mA
Gate Charge (Qg)95 nC @ 5 V
Input Capacitance (Ciss)13490 pF @ 25 V
Power Dissipation (Max)293W (Tc)
Drive Voltage5V, 10V
Supplier Device PackageI2PAK
RoHSRoHS
Part StatusObsolete

Application & Notes

BUK9E3R7-60E,127 by NXP USA Inc. is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-262-3 Long Leads, I²Pak, TO-262AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.4mOhm @ 25A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for BUK9E3R7-60E,127

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±10V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.1V @ 1mA
Rds On (Max) @ Id, Vgs3.4mOhm @ 25A, 10V
Power Dissipation (Max)293W (Tc)
Gate Charge (Qg) (Max) @ Vgs95 nC @ 5 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds13490 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Current - Continuous Drain (Id) @ 25°C120A (Tc)

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