PC
Rochester Electronics, LLCTO-252-3, DPak (2 Leads + Tab), SC-63RoHS

BUK6213-30C,118

NEXPERIA BUK6213-30C - 47A, 30V,

BUK6213-30C,118 by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-252-3, DPak (2 Leads + Tab), SC-63

Series

Automotive, AEC-Q101, TrenchMOS™

Status

Active

$0.22 / unit (market reference)

MOQ: 1374 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelBUK6213-30C,118
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)14mOhm @ 10A, 10V
Vgs(th) (Max)2.8V @ 1mA
Gate Charge (Qg)19.5 nC @ 10 V
Input Capacitance (Ciss)1108 pF @ 25 V
Power Dissipation (Max)60W (Tc)
Drive Voltage10V
Supplier Device PackageDPAK
RoHSRoHS
Part StatusActive

Application & Notes

BUK6213-30C,118 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 14mOhm @ 10A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±16V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.8V @ 1mA
Rds On (Max) @ Id, Vgs14mOhm @ 10A, 10V
Power Dissipation (Max)60W (Tc)
Gate Charge (Qg) (Max) @ Vgs19.5 nC @ 10 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds1108 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C47A (Tc)

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