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STMicroelectronicsISOWATT-218-3RoHS

BU808DFI

TRANS NPN DARL 700V ISOWATT218

BU808DFI by STMicroelectronics
Subcategory

Transistors Bipolar Bjt Single

Package

ISOWATT-218-3

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandSTMicroelectronics
ModelBU808DFI
Package / CaseISOWATT-218-3
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
Power Dissipation (Max)52 W
Supplier Device PackageISOWATT-218
RoHSRoHS
Part StatusObsolete

Application & Notes

BU808DFI by STMicroelectronics is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The ISOWATT-218-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

Power - Max52 W
Transistor TypeNPN - Darlington
Vce Saturation (Max) @ Ib, Ic1.6V @ 500mA, 5A
Current - Collector (Ic) (Max)8 A
Current - Collector Cutoff (Max)400µA
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5A, 5V
Voltage - Collector Emitter Breakdown (Max)700 V

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