BTS7904BATMA1
MOSFET N/P-CH 55V/30V 40A TO263
Transistors Fets Mosfets Arrays
TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
OptiMOS™
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | BTS7904BATMA1 |
| Package / Case | TO-263-6, D²Pak (5 Leads + Tab), TO-263BA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N and P-Channel |
| Drain to Source Voltage (Vdss) | 55V, 30V |
| Rds On (Max) | 11.7mOhm @ 20A, 10V |
| Vgs(th) (Max) | 2.2V @ 40µA |
| Gate Charge (Qg) | 121nC @ 10V |
| Input Capacitance (Ciss) | 6100pF @ 25V |
| Power Dissipation (Max) | 69W, 96W |
| Supplier Device Package | PG-TO263-5-1 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
BTS7904BATMA1 by Infineon Technologies is an N-channel power MOSFET rated at 55V, 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-6, D²Pak (5 Leads + Tab), TO-263BA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 11.7mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BTS7904BATMA1
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All Technical Specifications
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Power - Max | 69W, 96W |
| Vgs(th) (Max) @ Id | 2.2V @ 40µA |
| Rds On (Max) @ Id, Vgs | 11.7mOhm @ 20A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 121nC @ 10V |
| Drain to Source Voltage (Vdss) | 55V, 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 6100pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 40A |
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